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| PROVISIONAL SemiWell Semiconductor P10M40CT Symbol 10A Schottky Barrier Rectifier Features 1! Plastic material meets UL94V-0 Metal silicon junction Very low forward voltage drop High current / High surge capability Guarding for over voltage protection Lead solderable per MIL-STD202,method 208 guaranteed Lead temperature for soldering purpose 250C Max for 10 second Weight : 2.2 gram (approximately) b : ! 2 3! b : TO-220 General Description The P10M40CT schottky Rectifier has been designed for applications requiring low forward voltage drop and switching power supply, dc-dc converter, free-wheeling diode, battery charging, polarity protection application. 1 2 3 Absolute Maximum Ratings Symbol VRRM VR IF(AV) IFSM Eas TJ TSTG Parameter Repetitive Peak Reverse Voltage Maximum DC Reverse Voltage Average Forward Current @ TC = 97C Per Diode Total Device Value 40 40 5 10 175 3.5 - 65 ~ 125 - 65 ~ 150 Units V V A A A mJ C C Non-Repetitive Peak Surge Current (Surge applied at rated load conditions half sinewave,single phase, 60Hz) Non-Repetitive Avalanche Energy @ TC=25C , Vdd = 15V , L=18uH Maximum Junction Temperature Storage Temperature Range Thermal Characteristics Symbol RJC Parameter Maximum Thermal Resistance, Junction-to-Case ( per diode ) Value 3.0 Units C/W Nov, 2002. Rev. 0 copyright@SemiWell Semiconductor Co., Ltd., All rights reserved. 1/3 P10M40CT Electrical Characteristics Symbol Reverse Leakage Current IR VR = VRRM TC = 25 C TC = 125 C - Parameter Min Typ - Max 1 50 Units mA Forward Voltage Drop IF = IF = IF = IF = 5A 5A 10 A 10 A TC = 25 C TC = 125 C TC = 25 C TC = 125 C 0.55 0.46 0.72 0.63 VF - - V CT Typical Junction Capacitance @ fT=1MHZ , VR=4V , Tj =25 400 PF 2/3 P10M40CT Fig 1. VF-IF Characteristic 50 10 TJ=125TJ=125- Fig 2. VR-IR Characteristic Forward Current, IF[A] Reverse Current, IR[mA] 1 TJ=75- 10 TJ=25- 0.1 TJ=25- 1 0.0 0.01 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 8 16 24 32 40 48 Forward Voltage Drop, VF[V] Reverse Voltage, VR[V] Fig 3. Typical junctiion capacitance Fig 4. Forward current derating curve 12 6 . Notes 1. TJ = 25[-] 2. F = 1MHz Average forward Current, IF(AV)[A] 100 Junction capacitor, CJ[pF] 10 8 1000 6 4 2 100 0.1 0 1 10 0 25 50 75 100 125 150 Reverse Voltage, VR[V] Case Temperature, TC[-] Fig 5. Maximum non-repetitive forward surge current per diode 300 Peak Forward Surge Current, IFSM[A] 250 200 150 100 50 0 1 10 100 Numbers of Cycle at 60Hz 3/3 |
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